cystech electronics corp. spec. no. : c894h8 issued date : 2016.07.26 revised date : page no. : 1/10 mted6n25h8 cystek product specification n-channel enhancement mode power mosfet mted6n25h8 bv dss 250v i d @v gs =10v, t c =25 c 4.6a i d @v gs =10v, t a =25 c 1.2a r dson(typ) v gs =10v, i d =5a 426m features ? single drive requirement ? low on-resistance ? fast switching characteristic ? repetitive avalanche rated ? pb-free lead plating and halogen-free package symbol outline mted6n25h8 dfn5 6 ordering information device package shipping MTED6N25H8-0-T6-G dfn 5 6 (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel pin 1 g gate d drain s source environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t6 : 3000 pcs / tape & reel,13? reel product rank, zero for no rank products product name s s s g d d d d s s s g d d d d pin 1
cystech electronics corp. spec. no. : c894h8 issued date : 2016.07.26 revised date : page no. : 2/10 mted6n25h8 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v ds 250 gate-source voltage v gs 30 v continuous drain current @ t c =25 c, v gs =10v (note 1) 4.6 continuous drain current @ t c =100c, v gs =10v (note 1) i d 3.3 continuous drain current @ t a =25 c, v gs =10v (note 2) 1.2 *3 continuous drain current @ t a =70 c, v gs =10v (note 2) i dsm 1.0 *3 pulsed drain current (note 3) i dm 18.4 *1 avalanche current (note 3) i as 9 a avalanche energy @ l=10mh, i d =4.6a, v dd =50v (note 5) e as 106 repetitive avalanche energy @ l=0.05mh (note 3) e ar 3 *2 mj t c =25 (note 1) 30 t c =100 (note 1) p d 15 t a =25 c (note 2) 1.9 total power dissipation t a =70 c (note 2) p dsm 1.2 w operating junction and storage temperature range tj, tstg -55~+175 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r jc 5 thermal resistance, junction-to-ambient, max (note 2) 65 thermal resistance, junction-to-ambient, max (note 4) r ja 125 c/w note : 1 . the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and is more useful in setting the upper di ssipation limit for cases where additional heatsinking is used. 2 . the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2 oz. copper, in a still air environment with t a =25 c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user?s specific board design. 3 . pulse width limited by junction temperature t j(max) =175 c. ratings are based on low frequency and low duty cycles to keep initial t j =25 c. 4. when mounted on the minimum pa d size recommended (pcb mount), t 10s. 5. 100% tested by conditions of l=2mh, i as =2a, v gs =10v, v dd =50v characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 250 - - v v gs =0v, i d =250 a ? bv dss / ? tj - 0.2 - v/ c reference to 25c, i d =250 a v gs(th) 2 - 4 v v ds = v gs , i d =250 a g fs *1 - 5.6 - s v ds =15v, i d =5a i gss - - 100 na v gs = 30v - - 1 v ds =200v, v gs =0v i dss - - 25 a v ds =160v, v gs =0v, tj=125 c r ds(on) *1 - 426 550 m v gs =10v, i d =5a
cystech electronics corp. spec. no. : c894h8 issued date : 2016.07.26 revised date : page no. : 3/10 mted6n25h8 cystek product specification dynamic ciss - 468 - coss - 39 - crss - 22 - pf v gs =0v, v ds =50v, f=1mhz qg *1, 2 - 13.2 - qgs *1, 2 - 2.5 - qgd *1, 2 - 5.4 - nc i d =5a, v ds =200v, v gs =10v t d(on) *1, 2 - 10.2 - tr *1, 2 - 18.2 - t d(off) *1, 2 - 22.4 - t f *1, 2 - 15.4 - ns v ds =125v, i d =5a, v gs =10v, r g =2.7 rg - 3.8 - f=1mhz source-drain diode i s *1 - - 4.6 i sm *3 - - 18.4 a v sd *1 - 0.75 1.2 v i s =1a, v gs =0v trr - 74.6 - ns qrr - 183.7 - nc i f =5a, di f /dt=100a/ s note : *1.pulse test : pulse width 300 s, duty cycle 2% *2.independent of operating temperature *3.pulse width limited by maximum junction temperature.
cystech electronics corp. spec. no. : c894h8 issued date : 2016.07.26 revised date : page no. : 4/10 mted6n25h8 cystek product specification typical characteristics typical output characteristics 0 2 4 6 8 10 12 0246810 v ds , drain-source voltage(v) i d , drain current(a) 10v, 9v, 8v, 7v, 6v v gs =4.5v 5.5 v 5v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 100 1000 10000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) in descending order v gs = 6v 7v 10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 02468101 i dr , reverse drain current(a) v sd , source-drain voltage(v) 2 tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 200 400 600 800 1000 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.8 1.2 1.6 2 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 200 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =5a r dson @ tj=25c : 426m typ v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =5a
cystech electronics corp. spec. no. : c894h8 issued date : 2016.07.26 revised date : page no. : 5/10 mted6n25h8 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 0 10203040506070 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss normalizedthreshold voltage vs junction tempearture 0.2 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) v ds =15v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0246810121416 total gate charge---qg(nc) v gs , gate-source voltage(v) v ds =200v v ds =125v i d =5a v ds =50v maximum safe operating area 0.01 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 100ms 1ms 100 s r ds( on) limited t c =25c, tj=175, v gs =10v r jc =5c/w, single pulse maximum drain current vs case temperature 0 1 2 3 4 5 25 50 75 100 125 150 175 200 t c , case temperature(c) i d , maximum drain current(a) v gs =10v, r jc =5c/w
cystech electronics corp. spec. no. : c894h8 issued date : 2016.07.26 revised date : page no. : 6/10 mted6n25h8 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 2 4 6 8 10 12 0246810 v gs , gate-source voltage(v) i d , drain current (a) v ds =10v single pulse maximum power dissipation 0 100 200 300 400 500 600 0.0001 0.001 0.01 0.1 1 10 pulse width(s) power (w) t j(max) =175c t c =25c r jc =5c/w transient thermal response curves 0.01 0.1 1 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r jc(t) =r(t)*r jc 2.duty factor, d=t1/t2 3.t jm -t c =p dm *r jc (t) 4.r jc =5c/w
cystech electronics corp. spec. no. : c894h8 issued date : 2016.07.26 revised date : page no. : 7/10 mted6n25h8 cystek product specification recommended soldering footprint & stencil design unit : mm
cystech electronics corp. spec. no. : c894h8 issued date : 2016.07.26 revised date : page no. : 8/10 mted6n25h8 cystek product specification reel dimension carrier tape dimension pin #1
cystech electronics corp. spec. no. : c894h8 issued date : 2016.07.26 revised date : page no. : 9/10 mted6n25h8 cystek product specification recommended wave soldering condition peak temperature soldering time product pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6c/second max. 6 minutes max. time 25 c to peak temperature 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c894h8 issued date : 2016.07.26 revised date : page no. : 10/10 mted6n25h8 cystek product specification dfn5 6 dimension millimeters inches millimeters marking : inches dim min. max. min. max. dim min. max. min. max. a 0.900 1.000 0.035 0.039 k 1.190 1.390 0.047 0.055 a3 0.254 ref 0.010 ref b 0.350 0.450 0.014 0.018 d 4.944 5.096 0.195 0.201 e 1.270 typ. 0.050 typ. e 5.974 6.126 0.235 0.241 l 0.559 0.711 0.022 0.028 d1 3.910 4.110 0.154 0.162 l1 0.424 0.576 0.017 0.023 e1 3.375 3.575 0.133 0.141 h 0.574 0.726 0.023 0.029 d2 4.824 4.976 0.190 0.196 10 12 10 12 e2 5.674 5.826 0.223 0.229 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . 8-lead dfn5 6 plastic package cys package code : h8 device n date code ame ed6 n25
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